Accurate capacitor matching measurements using floating gate test structures

H. Tuinhout, H. Elzinga, J.T.H. Brugman, F. Postma
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引用次数: 38

Abstract

This paper discusses a new method for characterization of matching of capacitors using the so-called floating gate capacitance measurement method. The paper explains this (DC!!) measurement method and then discusses modifications that were implemented to improve the measurement accuracy and repeatability from its original thousands of ppms (0.1 to 0.3%) to values down to 50 ppm. This improved accuracy is necessary for correct characterization of capacitor matching. The method is demonstrated with results from double-polysilicon capacitor matching measurements.
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使用浮栅测试结构进行精确的电容匹配测量
本文讨论了一种表征电容器匹配的新方法——浮栅电容测量法。本文解释了这种(直流!!)测量方法,然后讨论了为提高测量精度和可重复性而实施的修改,从最初的数千ppm(0.1至0.3%)到低至50 ppm的值。这种精度的提高对于电容匹配的正确表征是必要的。通过双多晶硅电容匹配测量的结果对该方法进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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