Path to 3D heterogeneous integration

Abstract

The DARPA Microsystems Technology Office is developing revolutionary materials, devices, and integration techniques for meeting the performance requirements for advanced microwave and RF systems. The DARPA Compound Semiconductor Materials on Silicon (COSMOS) program focused on the development of new methods to tightly integrate compound semiconductor (CS) technologies within state-of-the-art silicon CMOS circuits in order to achieve unprecedented circuit performance levels. The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is continuing that work by developing heterogeneous integration processes to intimately combine advanced CS devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. Taken together, these programs are addressing many of the critical challenges for next-generation RF modules and seek to revolutionize DoD capabilities in this area.