Low Dk / Df Dielectric Material for 5G Applications

Hirotatsu Ikarashi, Toshiyuki Sato, S. Teraki, Masaki Yoshida, H. Ozaki
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Abstract

In this paper, we have developed a new low Dk / Df dielectric material for 5G applications. This material is based on modified polyphenylene ether (m-PPE) and elastomer. It can be cured at 200 degrees Celsius. This material has low Dk / Df, high Tg, low water absorption and low warpage properties, therefore it is suitable dielectric layers for 5G Wafer Level Chip Size Packages (WL-CSP) and High-Performance Computing (HPC) substrates.
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5G应用低Dk / Df介电材料
在本文中,我们开发了一种用于5G应用的新型低Dk / Df介电材料。这种材料是基于改性聚苯醚(m-PPE)和弹性体。它可以在200摄氏度下固化。该材料具有低Dk / Df,高Tg,低吸水率和低翘曲性能,因此它是5G晶圆级芯片尺寸封装(WL-CSP)和高性能计算(HPC)衬底的合适介质层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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