Hongyu He, Jin He, W. Deng, Hao Wang, Yue Hu, Xiaoan Zhu, Xueren Zheng
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引用次数: 1
Abstract
A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.
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