LDD structure influence on n-MOSFET parameters

Abstract

In this paper, we present the implications that the Lightly Doped Drain-LDD technique used for Metal Oxide Semiconductor-MOS fabrication of n-channel transistor has on different device parameters. The discussion focuses on the influence of the n- doping of drain, respectively source on the electric field, one of the most important issues of today's technology, but takes also into consideration another aspects such as the impact of LDD on series resistance of the device and channel length contribution on breakdown voltage reduction when considering drain/source light doping.