Multi-domain process modeling for advanced logic and memory devices: from equimpments to materials

I. Jang, Hyoungsoo Ko, Alexander Schmidt, Sae-jin Kim, Moonhyun Cha, H. Ahn, Honglae Park, Dae Sin Kim, Hokyu Kang
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Abstract

For modern semiconductor devices, the level of details which we should investigate for predictive simulation is going extreme. Not only the atomistic simulation is required but equipment and transistor scale simulation is also needed to understand the formation of atomic scale feature. In this paper, practical applications of multi-domain simulations are introduced for advanced S/D process in logic, interface engineering in DRAM cell and cell stack ALD process of flash memory devices.
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高级逻辑和存储设备的多域过程建模:从设备到材料
对于现代半导体器件,我们应该研究的预测模拟的细节水平是极端的。为了了解原子尺度特征的形成,不仅需要原子尺度的模拟,还需要设备和晶体管尺度的模拟。本文介绍了多域仿真在逻辑高级S/D过程、DRAM单元的接口工程和闪存器件的单元堆栈ALD过程中的实际应用。
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