I. Jang, Hyoungsoo Ko, Alexander Schmidt, Sae-jin Kim, Moonhyun Cha, H. Ahn, Honglae Park, Dae Sin Kim, Hokyu Kang
{"title":"Multi-domain process modeling for advanced logic and memory devices: from equimpments to materials","authors":"I. Jang, Hyoungsoo Ko, Alexander Schmidt, Sae-jin Kim, Moonhyun Cha, H. Ahn, Honglae Park, Dae Sin Kim, Hokyu Kang","doi":"10.1109/IEDM.2018.8614630","DOIUrl":null,"url":null,"abstract":"For modern semiconductor devices, the level of details which we should investigate for predictive simulation is going extreme. Not only the atomistic simulation is required but equipment and transistor scale simulation is also needed to understand the formation of atomic scale feature. In this paper, practical applications of multi-domain simulations are introduced for advanced S/D process in logic, interface engineering in DRAM cell and cell stack ALD process of flash memory devices.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
For modern semiconductor devices, the level of details which we should investigate for predictive simulation is going extreme. Not only the atomistic simulation is required but equipment and transistor scale simulation is also needed to understand the formation of atomic scale feature. In this paper, practical applications of multi-domain simulations are introduced for advanced S/D process in logic, interface engineering in DRAM cell and cell stack ALD process of flash memory devices.