Hang Hu, S. Ding, H.F. Lim, Chunxiang Zhu, M. Li, S.J. Kim, X.F. Yu, J.H. Chen, Y. F. Yong, B. Cho, D. Chan, S. Rustagi, M. Yu, C. Tung, A. Du, D. My, P.D. Foot, A. Chin, D. Kwong
{"title":"High performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for RF and mixed signal IC applications","authors":"Hang Hu, S. Ding, H.F. Lim, Chunxiang Zhu, M. Li, S.J. Kim, X.F. Yu, J.H. Chen, Y. F. Yong, B. Cho, D. Chan, S. Rustagi, M. Yu, C. Tung, A. Du, D. My, P.D. Foot, A. Chin, D. Kwong","doi":"10.1109/IEDM.2003.1269303","DOIUrl":null,"url":null,"abstract":"In this paper, a high performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz to 20 GHz, low leakage current of 7.45/spl times/10/sup -9/ A/cm/sup 2/ at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
In this paper, a high performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz to 20 GHz, low leakage current of 7.45/spl times/10/sup -9/ A/cm/sup 2/ at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.
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