{"title":"Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications","authors":"X. Huang, P. Lai","doi":"10.1109/EDSSC.2013.6628237","DOIUrl":null,"url":null,"abstract":"BaTiO<sub>3</sub> with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO<sub>3</sub> CTL, the one with Hf-doped BaTiO<sub>3</sub> shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO<sub>3</sub>. Therefore, the Hf-doped BaTiO<sub>3</sub> is a promising candidate as CTL for flash memory application.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
BaTiO3 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO3 CTL, the one with Hf-doped BaTiO3 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO3. Therefore, the Hf-doped BaTiO3 is a promising candidate as CTL for flash memory application.