M. Natarajan, T. Sheng, K. Pey, Y. Lee, M. Radhakrishnan
{"title":"Analysis of dopant metrology using scanning capacitance microscopy and transmission electron microscopy as complementary techniques","authors":"M. Natarajan, T. Sheng, K. Pey, Y. Lee, M. Radhakrishnan","doi":"10.1109/IPFA.1997.638126","DOIUrl":null,"url":null,"abstract":"The results of physical analysis carried out on Dynamic Random Access Memory (DRAM) devices, using Scanning Capacitance Microscopy (SCM) and Transmission Electron Microscopy (TEM) to investigate specifically the dopant profile at the sidewall of the trench capacitor structures is presented here. The SCM results provide information on the dopant metrology on samples, whereas the TEM analysis, which includes junction delineation, further supports the finding of dopant distribution as well as other physical phenomena.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The results of physical analysis carried out on Dynamic Random Access Memory (DRAM) devices, using Scanning Capacitance Microscopy (SCM) and Transmission Electron Microscopy (TEM) to investigate specifically the dopant profile at the sidewall of the trench capacitor structures is presented here. The SCM results provide information on the dopant metrology on samples, whereas the TEM analysis, which includes junction delineation, further supports the finding of dopant distribution as well as other physical phenomena.
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