Priya Singh, Dr. Vandana Niranjan, Prof. Ashwni Kumar
{"title":"A Comparative Study of CMOS Transimpedance Amplifier (TIA)","authors":"Priya Singh, Dr. Vandana Niranjan, Prof. Ashwni Kumar","doi":"10.54105/ijvlsid.a1215.033123","DOIUrl":null,"url":null,"abstract":"In this paper a comparative study of different CMOS transimpedance amplifier has been presented. Standard device parameters of transimpedance amplifier such as gain, input refereed noise, power dissipation and group delay are studied and compared. Here the transimpedance amplifier is divided on the basis of its topology and device technology used and performance is summarized to get the overview. Most of the analysis taken are performed on 0.18 μm technology and some are implemented using 45nm, 0.13μm, 65nm, and 90nm.","PeriodicalId":275481,"journal":{"name":"Indian Journal of VLSI Design","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Indian Journal of VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.54105/ijvlsid.a1215.033123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper a comparative study of different CMOS transimpedance amplifier has been presented. Standard device parameters of transimpedance amplifier such as gain, input refereed noise, power dissipation and group delay are studied and compared. Here the transimpedance amplifier is divided on the basis of its topology and device technology used and performance is summarized to get the overview. Most of the analysis taken are performed on 0.18 μm technology and some are implemented using 45nm, 0.13μm, 65nm, and 90nm.
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