Design guideline for halo condition on CMOSFETs utilizing FLA

Abstract

We fabricated MOSFET devices using flash lamp annealing (FLA), and studied the halo profile dependence on CMOSFETs performance. Although FLA is high temperature anneal of 1000/spl deg/C or more and has soaking time corresponding to millisecond, it causes anomalous low level of halo dopant activation and redistribution. This anomaly degrades threshold voltage roll-off characteristics and Ion-Ioff characteristics. In this paper, we investigated halo dopant redistribution at each process step and the halo condition dependence of CMOSFETs characteristics, and proposed the design guideline of halo condition using FLA.