Photoemission identification of emitter resistance for CMOS latch-up hysteresis

Abstract

The authors present a photoemission detection technique applied to a specially designed p-n-p-n structure in order to accurately determine the essential parameters dominating the hysteresis of I-V characteristics in CMOS latchup paths. It is shown experimentally and theoretically that the emitter resistance plays a significant role in producing hysteresis. The authors also describe the three-dimensional effect in terms of pin combinations for the formation of the hysteresis.<>