H. Fukutome, Y. Momiyama, H. Nakao, T. Aoyama, H. Arimoto
{"title":"Fluorine implantation impact in extension region on the electrical performance of sub-50nm P-MOSFETs","authors":"H. Fukutome, Y. Momiyama, H. Nakao, T. Aoyama, H. Arimoto","doi":"10.1109/IEDM.2003.1269327","DOIUrl":null,"url":null,"abstract":"We conclude that fluorine implantation in the extension region (F-tub) makes the Vth roll-off characteristic dramatically improve without degrading the drive current. Using scanning tunneling microscopy (STM) for two-dimensional (2D) carrier profiling, we directly confirmed that such an improvement of the device performance was induced by the reduction of the overlap length and the steep lateral abruptness on the nanometer scale.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
We conclude that fluorine implantation in the extension region (F-tub) makes the Vth roll-off characteristic dramatically improve without degrading the drive current. Using scanning tunneling microscopy (STM) for two-dimensional (2D) carrier profiling, we directly confirmed that such an improvement of the device performance was induced by the reduction of the overlap length and the steep lateral abruptness on the nanometer scale.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
