Improved characterization and modeling of PZT thin film capacitors

Abstract

Sputtered lead zirconate titanate (PZT) thin films are proposed as new dielectric material for monolithic microwave integrated circuit (MMIC) thin film capacitors to replace currently available silicon nitride-based MMIC because it offers higher permittivity that will lead to circuit size reduction. The titanate films were sputtered on Pt/Ti/SiO2 coated, undoped silicon wafers. Capacitors with 50 times 50 mum2 electrode area were formed on the PZT layer using electron beam lithography. This paper reports on the improved characterization and modeling of the devices. Results of this study show that the 50 times 50 mum2 capacitor exhibit capacitance values of almost 14 pF and PZT relative permittivity of 300.