{"title":"Electrical and Reliability Characteristics of Submicron Nmosfet's with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O","authors":"H. Hwang, W. Ting, D. Kwong, Jack C. Lee","doi":"10.1109/DRC.1991.664712","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N/sub 2/O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N/sub 2/O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide. >
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