Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Abstract

In this work, an efficient switching transient analytical model is proposed for P-GaN gate HEMTs, in which the dynamic gate capacitance $C_{\mathrm{G}}(V_{\text{DS}},\ V_{\text{GS}})$ characteristics during switching transient has been taken into consideration. Meanwhile, the modeling of external inductance, PCB, driver IC and surface mounting technology (SMT) components in the double-pulse characterization platform are taken into consideration. The proposed dynamic capacitance model is validated by the $C-V$ measurements. Consequently, the switching transient analytical model featuring dynamic gate capacitance characteristics can yield improved accuracy, in comparison with the conventional approach with merely static gate capacitance model.