Design of wideband bandpass filters using Si-BCB technology for millimeter-wave applications

Rui Li, T. Lim, S. W. Ho, Y. Xiong, D. Pinjala
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引用次数: 6

Abstract

This paper presents the design of two types of wideband bandpass filters with different bandwidths for millimeter-wave D-band applications. The proposed filters are implemented on a three-layer structure deposited on a 400-µm silicon (Si) bulk with benzocyclobutene (BCB) as the substrate. The characteristics of the basic structures for these two types of bandpass filters, a square ring resonator and a stub-loaded multiple-mode resonator (MMR), are studied. The bandpass filters are implemented and measured, and the measurement results agree with the simulations well and exhibit bandpass filtering responses at 134.3 GHz and 132.8 GHz, with fractional bandwidths of 25.7% and 34.3%, respectively.
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采用Si-BCB技术设计用于毫米波应用的宽带带通滤波器
本文设计了两种不同带宽的毫米波d波段宽带带通滤波器。所提出的滤波器是在以苯并环丁烯(BCB)为衬底的400微米硅(Si)块上沉积的三层结构上实现的。研究了两种带通滤波器的基本结构,即方环谐振器和桩负载多模谐振器(MMR)。实现并测量了带通滤波器,测量结果与仿真结果吻合较好,在134.3 GHz和132.8 GHz处表现出带通滤波响应,分数带宽分别为25.7%和34.3%。
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