J. Olsson, R. Valtonen, U. Heinle, L. Vestling, A. Soderbarg, H. Norde
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引用次数: 16
Abstract
This paper reports a new measurement method for extraction of sub-micrometer channel lengths in DMOS transistors. The method is based on capacitance-voltage measurements of the gate to source, gate to p-base and gate to drain capacitances. A channel length of 0.3 /spl mu/m has been measured on DMOS transistors. Numerical device simulations and small-signal capacitance simulations support the results and the measurement principle.
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