Manufacturing technology challenges for low power electronics

Z. Lemnios
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引用次数: 14

Abstract

SOI is an attractive technology option for low power, high performance semiconductors. A number of breakthroughs and developments are required to move the material into mainstream acceptance by manufacturers. It is too early to predict the future dominance of SOI technology. Next steps in the development of an SOI technology base are better understanding of how materials issues affect device/circuit operation, and which device design paradigms are best.
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低功耗电子产品的制造技术挑战
SOI是低功耗、高性能半导体的一种有吸引力的技术选择。要使这种材料得到制造商的主流接受,还需要一些突破和发展。现在预测SOI技术未来的主导地位还为时过早。SOI技术基础发展的下一步是更好地理解材料问题如何影响器件/电路运行,以及哪种器件设计范式是最好的。
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Semiconductor CIM system, innovation toward the year 2000 CVD SiN/sub X/ anti-reflective coating for sub-0.5 /spl mu/m lithography Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5 V The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 /spl mu/m epitaxial Si channel N-MOSFETs grown by UHV-CVD High-current, small parasitic capacitance MOS FET on a poly-Si interlayered (PSI: /spl Psi/) SOI wafer
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