{"title":"A High Gain Ka-Band Asymmetrical GaAs Doherty Power Amplifier MMIC for 5G Applications","authors":"Ahmet Değirmenci, Ahmet Aktuğ","doi":"10.23919/EuMIC.2019.8909611","DOIUrl":null,"url":null,"abstract":"In this paper, a 3-stage, Ka-Band, asymmetrical Doherty Power Amplifier (DPA) MMIC using 0.15-$\\mu$ m depletion mode (D-mode) Gallium Arsenide (GaAs) pHEMT is presented. In order to increase operation bandwidth, the quarter-wavelength ($\\lambda$/4) transmission line behind main amplifier is eliminated and the output matching network is optimized for both back-off and peak efficiency. A 20-ohm Wilkinson power divider is used behind 1$^{st}$ stage so that the input impedance of the power divider can be easily transformed to the load impedance that the device at 1$^{st}$ stage must see. The fabricated DPA exhibits a measured output power of 27-27.5 dBm with a peak power added-efficiency (PAE) of 37%-39% in the frequency band of 27.25-29.75 GHz. The PAE at 6 dB and 7dB output power back-off are obtained as 25%-29% and 22%-28% respectively. Additionally, the large signal gain larger than 18 dB is obtained in the band of operation.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In this paper, a 3-stage, Ka-Band, asymmetrical Doherty Power Amplifier (DPA) MMIC using 0.15-$\mu$ m depletion mode (D-mode) Gallium Arsenide (GaAs) pHEMT is presented. In order to increase operation bandwidth, the quarter-wavelength ($\lambda$/4) transmission line behind main amplifier is eliminated and the output matching network is optimized for both back-off and peak efficiency. A 20-ohm Wilkinson power divider is used behind 1$^{st}$ stage so that the input impedance of the power divider can be easily transformed to the load impedance that the device at 1$^{st}$ stage must see. The fabricated DPA exhibits a measured output power of 27-27.5 dBm with a peak power added-efficiency (PAE) of 37%-39% in the frequency band of 27.25-29.75 GHz. The PAE at 6 dB and 7dB output power back-off are obtained as 25%-29% and 22%-28% respectively. Additionally, the large signal gain larger than 18 dB is obtained in the band of operation.
本文提出了一种采用0.15- $\mu$ m耗尽模式(D-mode)砷化镓(GaAs) pHEMT的3级ka波段非对称Doherty功率放大器(DPA) MMIC。为了增加工作带宽，消除了主放大器后面的四分之一波长($\lambda$ /4)传输线，并优化了输出匹配网络的回退和峰值效率。1 $^{st}$级后面使用了一个20欧姆的威尔金森功率分压器，以便功率分压器的输入阻抗可以很容易地转换为1 $^{st}$级设备必须看到的负载阻抗。该DPA的实测输出功率为27 ～ 27.5 dBm，峰值功率附加效率(PAE)为37%-39% in the frequency band of 27.25-29.75 GHz. The PAE at 6 dB and 7dB output power back-off are obtained as 25%-29% and 22%-28% respectively. Additionally, the large signal gain larger than 18 dB is obtained in the band of operation.
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