{"title":"XRD characterization of the MBE grown Si:GaAs, GaAs, AlGaAs, and InGaAs epilayer","authors":"Dee Chang Fu, M.S. Jusoh, A. Mat, B. Y. Majlis","doi":"10.1109/SMELEC.2002.1217876","DOIUrl":null,"url":null,"abstract":"The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217876","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.