{"title":"A new structural concept to suppress parasitic lateral carrier injection in insulated-gate thyristors","authors":"J. Ajit","doi":"10.1109/ISPSD.1996.509499","DOIUrl":null,"url":null,"abstract":"A new Insulated-Gate Thyristor structure with the N/sup -/ base and P base regions of the thyristor coupled by a n-channel MOSFET is described. This configuration eliminates the parasitic lateral bipolar transistor present in previously reported MOS gated thyristor structures. This configuration leads to low on-state drop close to that of a 1-D thyristor and high controllable current density.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new Insulated-Gate Thyristor structure with the N/sup -/ base and P base regions of the thyristor coupled by a n-channel MOSFET is described. This configuration eliminates the parasitic lateral bipolar transistor present in previously reported MOS gated thyristor structures. This configuration leads to low on-state drop close to that of a 1-D thyristor and high controllable current density.
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