Comparison of C-V measurement methods for RF-MEMS capacitive switches

Jiahui Wang, C. Salm, J. Schmitz
{"title":"Comparison of C-V measurement methods for RF-MEMS capacitive switches","authors":"Jiahui Wang, C. Salm, J. Schmitz","doi":"10.1109/ICMTS.2013.6528145","DOIUrl":null,"url":null,"abstract":"The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.","PeriodicalId":142589,"journal":{"name":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2013.6528145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
RF-MEMS电容开关C-V测量方法的比较
研究了几种电容电压测量方法在RF-MEMS电容开关片上表征中的适用性。这些器件结合了少量的皮法拉电容和高质量因数。采用标准的准静态和高频测量,以及最近引入的甚低频方法。S11由网络分析仪测量,通过射频测量计算器件的电容。在拉入和拉出电压周围发现显著差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Investigation on safe operating area and ESD robustness in a 60-V BCD process with different deep P-Well test structures A novel test structure to implement a programmable logic array using split-gate flash memory cells Comparison of C-V measurement methods for RF-MEMS capacitive switches Test structure and analysis for accurate RF-characterization of tungsten through silicon via (TSV) grounding devices Reconsideration of the threshold voltage variability estimated with pair transistor cell array
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1