Reconsideration of the threshold voltage variability estimated with pair transistor cell array

K. Terada, N. Higuchi, K. Tsuji
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Abstract

The standard deviation of threshold voltage, σVTH, which is estimated with Pair Transistor cell Array (PTA), is examined using the test chip fabricated by 65-nm technology. It is found that the errors are caused by two problems: 1) the problem in the approximation and 2) leak current in the isolation region. Taking them into account, the application of PTA to the test structure in scribe line is studied.
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对双晶体管单元阵列估计阈值电压变异性的重新考虑
采用65纳米工艺制作的测试芯片,对PTA (Pair Transistor cell Array)估算的阈值电压σVTH的标准差进行了检验。结果表明,误差主要由两个问题引起:1)近似问题和2)隔离区漏电流问题。为此,对PTA在划线试验结构中的应用进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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