{"title":"Spectroscopic electrical characterization of post-resistive-transition SiO2 films","authors":"R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura","doi":"10.1109/IMFEDK.2014.6867074","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.
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