Bionic Sypantic Application of OxRRAM Devices

Abstract

In this work, bionic synaptic application of OxRRAM (oxide RRAM) devices with various materials are provided and reviewed, mainly including transition metal oxides and non-metal oxides fabricated by different methodologies. It is possible to stimulate synaptic function in the human brain by electrical signals due to the typical ‘MIM’ sandwich structure and efficient fabrication process of OxRRAM devices. Based on elementary electrical characteristics including switching behavior, endurance performance and retention property, artificial synaptic behaviors mimicked by OxRRAM devices were under investigation, such as potentiation/depression response, long-/short-term plasticity (STP/LTP) and spike-time-dependent plasticity (STDP). In addition, the transition from short-term memory (STM) to longterm memory (LTM) of OxRRAM devices revealed the extensive prospect of its bionic application in artificial neuron network (ANN).