{"title":"A novel two-dimensional changeover GaN MMIC switch for electrically selectable SPDT multifunctional device","authors":"H. Mizutani, R. Ishikawa, K. Honjo","doi":"10.1109/CSICS.2017.8240443","DOIUrl":null,"url":null,"abstract":"This paper presents a novel frequency/amplitude two-dimensional change-over gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) switch. A frequency/amplitude two-dimensional changeover switch is an essential function block for electrically selectable single-pole-double-throw (SPDT) multifunctional devices in reconfigurable radio frequency (RF) front-end, which can change its function to SPDT switch, diplexer, duplexer, and so on. The demonstrated two-stage GaN MMIC indicates two-dimensional switching characteristics not only of changing the amplitude for ON/OFF states as the conventional switch but also of switching two frequency pass-bands between around 8-GHz and around 26-GHz. The insertion losses of lower than 1.6 dB and the isolations with higher than 13.3 dB are obtained for both pass-bands. The presented two-dimensional changeover switch function block promises to realize electrically selectable SPDT multifunctional devices for reconfigurable broadband RF front-end with low costs.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents a novel frequency/amplitude two-dimensional change-over gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) switch. A frequency/amplitude two-dimensional changeover switch is an essential function block for electrically selectable single-pole-double-throw (SPDT) multifunctional devices in reconfigurable radio frequency (RF) front-end, which can change its function to SPDT switch, diplexer, duplexer, and so on. The demonstrated two-stage GaN MMIC indicates two-dimensional switching characteristics not only of changing the amplitude for ON/OFF states as the conventional switch but also of switching two frequency pass-bands between around 8-GHz and around 26-GHz. The insertion losses of lower than 1.6 dB and the isolations with higher than 13.3 dB are obtained for both pass-bands. The presented two-dimensional changeover switch function block promises to realize electrically selectable SPDT multifunctional devices for reconfigurable broadband RF front-end with low costs.