A novel two-dimensional changeover GaN MMIC switch for electrically selectable SPDT multifunctional device

H. Mizutani, R. Ishikawa, K. Honjo
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引用次数: 2

Abstract

This paper presents a novel frequency/amplitude two-dimensional change-over gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) switch. A frequency/amplitude two-dimensional changeover switch is an essential function block for electrically selectable single-pole-double-throw (SPDT) multifunctional devices in reconfigurable radio frequency (RF) front-end, which can change its function to SPDT switch, diplexer, duplexer, and so on. The demonstrated two-stage GaN MMIC indicates two-dimensional switching characteristics not only of changing the amplitude for ON/OFF states as the conventional switch but also of switching two frequency pass-bands between around 8-GHz and around 26-GHz. The insertion losses of lower than 1.6 dB and the isolations with higher than 13.3 dB are obtained for both pass-bands. The presented two-dimensional changeover switch function block promises to realize electrically selectable SPDT multifunctional devices for reconfigurable broadband RF front-end with low costs.
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一种用于电可选SPDT多功能器件的新型二维转换GaN MMIC开关
本文提出了一种新型的频率/幅度二维转换氮化镓(GaN)单片微波集成电路(MMIC)开关。频率/幅度二维转换开关是可重构射频前端中可电选单极双掷(SPDT)多功能器件的基本功能模块,可将其功能转换为SPDT开关、双工器、双工器等。所演示的两级GaN MMIC显示了二维开关特性,不仅可以像传统开关一样改变ON/OFF状态的幅度,而且还可以在大约8 ghz和大约26 ghz之间切换两个频率通带。两个通带的插入损耗均小于1.6 dB,隔离度均大于13.3 dB。所提出的二维转换开关功能块有望以低成本实现可重构宽带射频前端的电可选SPDT多功能器件。
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