J. E. Gillberg, J. Titus, N. Hubbard, D. I. Burton, C. Wheatley
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引用次数: 1
Abstract
This paper updates our 2001 workshop paper and provides neutron test results of six device types representing the Star Power Gold, FSG, and the Star Power, FSP, radiation-hardened power MOSFET families manufactured by Fairchild Semiconductor. Both the FSG and FSP families employ a stripe-cell topology with devices having rated drain breakdown voltages from 30 volts to 250 volts.
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