{"title":"Single event effects and prompt dose hardness of a deep submicron commercial process","authors":"J. Benedetto","doi":"10.1109/REDW.2002.1045533","DOIUrl":null,"url":null,"abstract":"A single event effects and prompt dose hardened 0.25 /spl mu/m CMOS process has been developed using the WaferTech commercial foundry. The hardness was achieved solely using design-hardening techniques, i.e. no process changes were added or removed from the commercial flow.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2002.1045533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A single event effects and prompt dose hardened 0.25 /spl mu/m CMOS process has been developed using the WaferTech commercial foundry. The hardness was achieved solely using design-hardening techniques, i.e. no process changes were added or removed from the commercial flow.
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