William Kueber, G. Puzzilli, Niccolò Righetti, R. Basco, Lin Li, S. Beltrami, M. Bertuccio, E. Camozzi, David Daycock, Matthew King, Chris Larsen, Jeff Karpan, A. Goda, C. Roberts
{"title":"A Highly Reliable and Cost Effective 16nm Planar NAND Cell Technology","authors":"William Kueber, G. Puzzilli, Niccolò Righetti, R. Basco, Lin Li, S. Beltrami, M. Bertuccio, E. Camozzi, David Daycock, Matthew King, Chris Larsen, Jeff Karpan, A. Goda, C. Roberts","doi":"10.1109/IMW.2015.7150269","DOIUrl":null,"url":null,"abstract":"A 2D 16nm planar NAND cell technology is described with good cell to cell interference and reliability that can be used in a wide variety of applications. This second generation planar cell uses a high-K dielectric stack and a thin poly floating gate to maintain the needed gate coupling ratio and reduce adjacent cell interference. The technology includes select gates with the same planar structure as the cell. This select gate architecture simplifies the manufacturing of this NAND technology.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A 2D 16nm planar NAND cell technology is described with good cell to cell interference and reliability that can be used in a wide variety of applications. This second generation planar cell uses a high-K dielectric stack and a thin poly floating gate to maintain the needed gate coupling ratio and reduce adjacent cell interference. The technology includes select gates with the same planar structure as the cell. This select gate architecture simplifies the manufacturing of this NAND technology.
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