Dramatic improvement of high-k gate dielectric reliability by using mono-layer graphene gate electrode

Abstract

We demonstrate for the first time that the high-k gate dielectric reliability is dramatically improved by replacing metal gate electrode with graphene gate electrode. The atomic-scale thickness and flexible nature of graphene completely eliminate mechanical stress in the high-k gate dielectric, resulting in significant reduction of trap generation in the high-k film. Almost all the electrical properties related to reliability of MOSFET such as the PBTI, TDDB, leakage current, etc are significantly improved. Data retention and program/erase properties of charge trap Flash memory are also greatly improved.