Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, G. Leake, D. Harame, J. Bowers
{"title":"Quantum-Dot Lasers Grown on CMOS-compatible 300 mm Si Photonic Wafers","authors":"Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, G. Leake, D. Harame, J. Bowers","doi":"10.1109/CSW55288.2022.9930373","DOIUrl":null,"url":null,"abstract":"We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
