Progress in High and Ultrahigh Voltage Silicon Carbide Device Technology

Abstract

The current developments in silicon carbide (SiC) device technology in various voltage ranges are introduced. These developments correspond to, in particular, next-generation high to ultrahigh-voltage devices, SiC super-junction metal oxide semiconductor field effect transistors, SiC insulated gate bipolar transistors, and the fundamental bipolar degradation suppression technology. We expect that these next generation devices will trigger a paradigm shift in power electronics.