Molecular thin film transistors with a subthreshold swing of 100 mV/decade

H. Klauk, M. Halik, U. Zschieschang, G. Schmid, C. Dehm, R. Brederlow, S. Briole
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引用次数: 7

Abstract

We have developed a molecular thin film transistor concept based on a high-mobility organic semiconductor (pentacene) and an ultra-thin, molecular self-assembling monolayer (SAM) gate dielectric. These transistors operate at voltages between 1 and 3 V, with a subthreshold swing as low as 100 mV/decade. For a transistor with a channel length of 5 /spl mu/m, we have measured a transconductance of 0.01 /spl mu/S//spl mu/m, to our knowledge the largest transconductance reported for an organic semiconductor device.
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亚阈值摆幅为100mv / 10年的分子薄膜晶体管
我们开发了一种基于高迁移率有机半导体(并五苯)和超薄分子自组装单层(SAM)栅极电介质的分子薄膜晶体管概念。这些晶体管工作电压在1到3v之间,亚阈值摆幅低至100 mV/ 10年。对于沟道长度为5 /spl mu/m的晶体管,我们测量了0.01 /spl mu/S//spl mu/m的跨导,据我们所知,这是有机半导体器件报道的最大跨导。
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