Correlation study on moisture soak equivalent between MSL1 (85/85% soaking 168 hours) and Autoclave test in term of weight gain and delamination

J. Lim
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引用次数: 2

Abstract

Delamination is very critical for Power Mosfet devices especially Die Attach (DA) delamination. This is due to drain is always connected to Die Attach Paddle (DAP) area using interconnect (soft solder or epoxy type). When there is DA delamination occuring, resistance between Drain and Source will increase causing slow switching time on Power Mosfet devices. Since delamination is very crucial for Power Mosfet, a lot of design of engineerings (DOEs) are performed using on Moisture Sensitivity Level 1 (MSL 1) to screen the delamination. However MSL 1 always takes considerable long duration (168hrs) to complete the study. Time to market release of the products will be further delayed when repeat DOE is needed. This paper will discuss correlation study between Autoclave test (ACLV) and MSL 1 in term of delamination and weight gain (moisture absorption) of mold compound been done. Three mold compounds have been selected to perform weight gain study and delamination check to correlate MSL 1 versus ACLV test. Results on correlation between MSL 1 (85/85% soaking 168 hours) versus ACLV found DOE study can be used in evaluation stage to reduce DOE duration as it is comparable.
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MSL1(85/85%浸泡168小时)与蒸压试验在增重和分层方面的水分浸泡当量相关性研究
对于功率Mosfet器件来说,分层是非常关键的,尤其是贴装芯片(DA)的分层。这是由于排水总是连接到模具附加桨(DAP)区域使用互连(软焊料或环氧型)。当发生数模分层时,漏极和源极之间的电阻将增加,导致功率Mosfet器件的开关时间变慢。由于脱层对功率Mosfet至关重要,因此许多工程设计(do)都使用1级湿敏(MSL 1)来筛选脱层。然而,MSL 1总是需要相当长的时间(168小时)来完成研究。当需要重复DOE时,产品的上市时间将进一步推迟。本文将讨论高压灭菌试验(ACLV)与MSL - 1在模具复合材料分层和增重(吸湿)方面的相关性研究。选择三种霉菌化合物进行增重研究和分层检查,以确定MSL 1与ACLV试验的相关性。MSL 1(85/85%浸泡168小时)与ACLV的相关性研究结果表明,DOE研究具有可比性,可用于评估阶段以缩短DOE持续时间。
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