{"title":"Low Power SoC Memory BIST","authors":"Yuejian Wu, A. Ivanov","doi":"10.1109/DFT.2006.39","DOIUrl":null,"url":null,"abstract":"With the ever increasing number of memories embedded in a system-on-chip (SoC), power dissipation due to test has become a serious concern. This paper studies power dissipation in SRAMs and proposes a novel low power memory BIST. Its effectiveness is evaluated on memories in 130 and 90 nm technologies. As demonstrated, up to 30% power reduction can be achieved with virtually zero hardware overhead","PeriodicalId":113870,"journal":{"name":"2006 21st IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 21st IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFT.2006.39","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
With the ever increasing number of memories embedded in a system-on-chip (SoC), power dissipation due to test has become a serious concern. This paper studies power dissipation in SRAMs and proposes a novel low power memory BIST. Its effectiveness is evaluated on memories in 130 and 90 nm technologies. As demonstrated, up to 30% power reduction can be achieved with virtually zero hardware overhead
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