Capacitorless memory devices using virtual junctions

Abstract

Electrostatic doping (ED) offers an alternative to chemical doping in nanometer-scale devices. Recent works have shown the applicability of ED in a host of devices based on different materials ranging from Si and ultrahin fully depleted Silicon-on-Insulator layers to carbon nanotubes, graphene, and other 2D semiconductors, specially transition metal dichalcogenides (TMDs) [1] . In this work, we will demonstrate the application of electrostatic doping to form virtual junctions in an undoped ultrathin Silicon on Insulator layer, which can be operated as a memory device.