Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

2019 19th International Workshop on Junction Technology (IWJT) Pub Date : 2019-06-06 DOI:10.23919/IWJT.2019.8802622
K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi
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引用次数: 4

Abstract

We have successfully fabricated chip-level integrated nMISFETs with sputtered molybdenum disulfide (MoS2) thin channel using sulfur-powder annealing (SPA) and molybdenum disilicide (MoSi2) contact which show n-type-normally-off operation in accumulation. SPA intentionally compensated sulfur vacancies of sputtered MoS2 film. Eventually, we achieved a normally-off operation, which realizes industrial chip-level LSIs with MoS2 channel.
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用硫粉退火和ALD Al2O3栅极介电体制备的mossi2触点常关溅射非misfet
我们利用硫粉退火(SPA)和二硅化钼(MoSi2)触点成功制备了具有溅射二硫化钼(MoS2)薄通道的芯片级集成nmisfet，并在积累过程中表现出n型常关操作。SPA有意补偿溅射MoS2薄膜的硫空位。最终，我们实现了正常关断操作，实现了具有MoS2通道的工业芯片级lsi。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2019 19th International Workshop on Junction Technology (IWJT)
2019 19th International Workshop on Junction Technology (IWJT)
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Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Review of applications of Defect Photoluminescence Imaging (DPLI) during IC processing Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration Fabrication of epitaxial tunnel junction on tunnel field effect transistors [IWJT 2019 Endpage]
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