{"title":"A model for double snapback phenomena in N channel SOI MOSFETs","authors":"J.S.T. Huang","doi":"10.1109/SOI.1993.344566","DOIUrl":null,"url":null,"abstract":"In the double snapback phenomenon exhibited by a N channel MOSFET, the device is observed to switch from the first to the second snapback states. The first snapback can be attributed to either an MOS or bipolar feedback mechanism. This paper proposes a physical model that is able to provide explanations for the observed dependance of second snapback on the gate voltage and the channel length.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In the double snapback phenomenon exhibited by a N channel MOSFET, the device is observed to switch from the first to the second snapback states. The first snapback can be attributed to either an MOS or bipolar feedback mechanism. This paper proposes a physical model that is able to provide explanations for the observed dependance of second snapback on the gate voltage and the channel length.<>
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