Doping of GaN grown on silicon via ion implantation

Abstract

Since the last decade, power electronics is moving towards higher frequency and higher voltage applications. For this purpose, the use of silicon (Si) presents some limitations and new materials like Silicon Carbide (SiC) or more recently Gallium Nitride (GaN) have boomed. Because of its large bandgap and high breakdown voltage, GaN is a good candidate for high power device applications, as well as Radio Frequency (RF).