Seyedeh Yasamin Hojat, H. F. Baghtash, E. N. Aghdam
{"title":"A 350μW Low Noise Amplifier for IOT Applications","authors":"Seyedeh Yasamin Hojat, H. F. Baghtash, E. N. Aghdam","doi":"10.1109/IICM55040.2021.9730268","DOIUrl":null,"url":null,"abstract":"A μW power low noise amplifier for low voltage direct-conversion receiver such as IOT applications is reported. The proposed structure features a cascode topology with capacitor cross coupling technique. Utilizing forward body bias technique enables the structure to operate at a very low supply voltage down to 0.4 V. The reduced power supply, on the other hand, eliminates the requirement for additional biasing circuits, that helps to further reduce the power consumption. Simulation results with 0.13μm CMOS technology shows the 1.37 dB NF along with high gain of 28.4 dB and a good input impedance matching of -23 dB in the 2.4 GHz operating center frequency.","PeriodicalId":299499,"journal":{"name":"2021 Iranian International Conference on Microelectronics (IICM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Iranian International Conference on Microelectronics (IICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IICM55040.2021.9730268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
A μW power low noise amplifier for low voltage direct-conversion receiver such as IOT applications is reported. The proposed structure features a cascode topology with capacitor cross coupling technique. Utilizing forward body bias technique enables the structure to operate at a very low supply voltage down to 0.4 V. The reduced power supply, on the other hand, eliminates the requirement for additional biasing circuits, that helps to further reduce the power consumption. Simulation results with 0.13μm CMOS technology shows the 1.37 dB NF along with high gain of 28.4 dB and a good input impedance matching of -23 dB in the 2.4 GHz operating center frequency.
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