A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications

Peter Walters, P. Lau, Klaus Buehring, James Penney, Craig Farley, Pat McDade, Ken Weller
{"title":"A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications","authors":"Peter Walters, P. Lau, Klaus Buehring, James Penney, Craig Farley, Pat McDade, Ken Weller","doi":"10.1109/GAAS.1995.528963","DOIUrl":null,"url":null,"abstract":"A dual RF input high linearity power amplifier for PCS bands from 1850 to 1910 MHz has been developed for TDMA/CDMA applications. It features on die, input switching, active bias sensing and regulation, 50/spl Omega/ input matching and power down control. A single positive supply voltage is required. This amplifier is packaged in a low cost plastic super small SSOP-16 package. In digital operation adjacent channel power rejection is better then 30 dBc at 800 mW and 22 dB of gain. Maximum output power is 2 W. Typical high power added efficiency (PAE) is 40%.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528963","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

Abstract

A dual RF input high linearity power amplifier for PCS bands from 1850 to 1910 MHz has been developed for TDMA/CDMA applications. It features on die, input switching, active bias sensing and regulation, 50/spl Omega/ input matching and power down control. A single positive supply voltage is required. This amplifier is packaged in a low cost plastic super small SSOP-16 package. In digital operation adjacent channel power rejection is better then 30 dBc at 800 mW and 22 dB of gain. Maximum output power is 2 W. Typical high power added efficiency (PAE) is 40%.
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低成本线性AlGaAs/GaAs HBT MMIC功率放大器,具有有源偏置传感,适用于pc应用
为TDMA/CDMA应用开发了一种双射频输入高线性功率放大器,适用于1850至1910 MHz的PCS频段。它具有模具,输入开关,主动偏置传感和调节,50/spl ω /输入匹配和断电控制。需要单个正电源电压。该放大器封装在低成本的塑料超小型SSOP-16封装中。在数字运算中,在800mw和22db增益下,相邻通道抑制功率优于30dbc。最大输出功率2w。典型的大功率附加效率(PAE)为40%。
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