Low temperature SER and noise in a high speed DRAM

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI:10.1109/LTSE.1989.50171

W. Henkels, N. Lu, W. Hwang, T. Rajeevakumar, R. Franch, K. Jenkins, T. Bucelot, D. Heidel, M. Immediato

引用次数: 4

Abstract

The soft error rate (SER) and power bus noise were measured for a high-speed 512 kb CMOS DRAM (dynamic random access memory) operated at liquid-nitrogen temperatures. The SER decreased by about 3-20 times, depending upon cycle time and data type, and the power bus noise increased, but only modestly, at low temperature. These results show that the noise and SER do not preclude high-speed cryogenic DRAM operation. Compensation of increased inductive noise by decreased resistive noise is found to be a significant advantage in obtaining speed improvement by temperature reduction, rather than by room-temperature circuit and device techniques.<>

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

高速DRAM中的低温SER和噪声

测量了在液氮温度下工作的高速512 kb CMOS DRAM(动态随机存取存储器)的软错误率(SER)和电源总线噪声。根据周期时间和数据类型的不同，SER降低了约3-20倍，并且在低温下，电源母线噪声增加，但幅度很小。这些结果表明，噪声和SER并不妨碍DRAM的高速低温运行。通过降低电阻性噪声来补偿增加的电感噪声被发现是通过降低温度而不是通过室温电路和器件技术来获得速度提高的显着优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Proceedings of the Workshop on Low Temperature Semiconductor Electronics,

自引率

0.00%

发文量

期刊最新文献

The multistable charge controlled memory effect in SOI-transistors at low temperatures Characterization and modeling of BiCMOS logic for low temperature operation Refrigeration for low temperature (77 K) electronics Liquid nitrogen CMOS system study The effects of injection induced bandgap narrowing on bipolar transistors operating at low temperatures