Low temperature SER and noise in a high speed DRAM

W. Henkels, N. Lu, W. Hwang, T. Rajeevakumar, R. Franch, K. Jenkins, T. Bucelot, D. Heidel, M. Immediato
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引用次数: 4

Abstract

The soft error rate (SER) and power bus noise were measured for a high-speed 512 kb CMOS DRAM (dynamic random access memory) operated at liquid-nitrogen temperatures. The SER decreased by about 3-20 times, depending upon cycle time and data type, and the power bus noise increased, but only modestly, at low temperature. These results show that the noise and SER do not preclude high-speed cryogenic DRAM operation. Compensation of increased inductive noise by decreased resistive noise is found to be a significant advantage in obtaining speed improvement by temperature reduction, rather than by room-temperature circuit and device techniques.<>
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高速DRAM中的低温SER和噪声
测量了在液氮温度下工作的高速512 kb CMOS DRAM(动态随机存取存储器)的软错误率(SER)和电源总线噪声。根据周期时间和数据类型的不同,SER降低了约3-20倍,并且在低温下,电源母线噪声增加,但幅度很小。这些结果表明,噪声和SER并不妨碍DRAM的高速低温运行。通过降低电阻性噪声来补偿增加的电感噪声被发现是通过降低温度而不是通过室温电路和器件技术来获得速度提高的显着优势。
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