Wang Yi, He Jian, Huang Luoguang, Ni Tao, Yin Jun, Mo Jianghui, Yu Ruoqi, Li Jing, Dong Shiliang, Liu Ze, Chen Lei
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Abstract
This paper describes the design and characterization of a highly integrated pallet power amplifier using Gallium Nitride MMIC and discrete FETs. The amplifier is realized by the combination of a driving stage which consists of two Gallium Nitride MMICs and a pair of Lange couplers and a power stage which consists of two bare Gallium Nitride FETs and ceramic matching/biasing circuits. The complete pallet power amplifier is assembled with hybrid microwave integrated circuits (HMICs) technology with has an overall size of 20mm×12mm. When biased under pulsed condition, the pallet power amplifier has a saturated output power up to 130W, an associated power gain larger than 33dB, and a drain efficiency greater than 35%.
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