{"title":"Characterization of Thermal Runaway in a Ge Photodiode for Si Photonics","authors":"S. Rauch, Dongho Lee, A. Vert, Roy Gupta","doi":"10.1109/NATW49237.2020.9153080","DOIUrl":null,"url":null,"abstract":"The power limits due to thermal runaway of a germanium PIN photodiode as the O-band $(\\lambda\\sim\\mathbf{1300\\ nm})$ photodetector component of a silicon photonics technology were characterized under elevated stress conditions. A simplified model is used to project to use condition.","PeriodicalId":147604,"journal":{"name":"2020 IEEE 29th North Atlantic Test Workshop (NATW)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 29th North Atlantic Test Workshop (NATW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NATW49237.2020.9153080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The power limits due to thermal runaway of a germanium PIN photodiode as the O-band $(\lambda\sim\mathbf{1300\ nm})$ photodetector component of a silicon photonics technology were characterized under elevated stress conditions. A simplified model is used to project to use condition.
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