Self-heating characterization and its applications in technology development

P. Paliwoda, M. Toledano-Luque, T. Nigam, F. Guarín, M. Nour, S. Cimino, L. Pantisano, A. Gupta, Oscar Huerta-Gonzalez, M. Hauser, W. Liu, A. Vayshenker, D. Ioannou, D. Lee, L. Jiang, P. Yee, S. Rauch, B. Min
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引用次数: 1

Abstract

This work presents various device self-heating temperature sensing techniques and discusses their application in device reliability projection. Details of sensor design, technology choice, layout and ambient temperature impact on measurement results are discussed. The sensors produce excellent results which were confirmed through TCAD thermal simulation. Self-heating was studied by varying the number of fins per active region and proximity of sensor to heater was investigated. While most data presented here is on FinFET technology the learning and measurement techniques are applicable to planar technologies. Front-end-of-line (FEOL) reliability mechanism, hot carrier injection (HCI) was studied to show that self-heating effects can impact measurement results and recommendations are given on how to mitigate them. Self-heating is also studied for logic circuits by utilizing ring oscillators with several densities and stage counts to show that self-heating is considerably lower compared to constant voltage stress conditions conducted on discrete structures.
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自热特性及其在技术开发中的应用
本文介绍了各种器件自热感温技术,并讨论了它们在器件可靠性预测中的应用。详细讨论了传感器的设计、技术选择、布局和环境温度对测量结果的影响。通过TCAD热仿真验证了传感器的性能。通过改变每个有源区域的翅片数量来研究自热,并研究了传感器与加热器的接近程度。虽然这里提供的大多数数据是关于FinFET技术的,但学习和测量技术适用于平面技术。研究了前端线(FEOL)可靠性机制、热载流子注入(HCI)的自热效应对测量结果的影响,并提出了减轻自热效应的建议。通过使用具有多个密度和级数的环形振荡器对逻辑电路的自加热进行了研究,表明与在离散结构上进行的恒电压应力条件相比,自加热要低得多。
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