Radiation and hot electron effects on BiCMOS switching

Abstract

The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studied. The radiation induced surface recombination current in the base of the bipolar transistor and the radiation and hot electron induced resistive leakage paths in the BiCMOS structure have been modeled as a function of the interface state density and the oxide trapped charge density. An equivalent circuit model of a BiCMOS inverter, including radiation and hot electron effects on the MOSFET and the bipolar transistor and leakage paths in the BiCMOS structure is proposed. The proposed model is compared with experimental data and with MEDICI simulations and the agreement is good.