Determination of solid solubility limit of In and Sb in Si using bonded silicon-on-insulator (SOI) substrate

A. Sato, K. Suzuki, H. Horie, T. Sugii
{"title":"Determination of solid solubility limit of In and Sb in Si using bonded silicon-on-insulator (SOI) substrate","authors":"A. Sato, K. Suzuki, H. Horie, T. Sugii","doi":"10.1109/ICMTS.1995.513984","DOIUrl":null,"url":null,"abstract":"An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5/spl times/10/sup 18/ cm/sup -3/ between 800/spl deg/C and 1100/spl deg/C, while that of Sb varied from 7/spl times/10/sup 19/ cm/sup -3/ at 800/spl deg/C to 1.2/spl times/10/sup 20/ cm/sup -3/ at 1100/spl deg/C, both of which were higher than previously reported values.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5/spl times/10/sup 18/ cm/sup -3/ between 800/spl deg/C and 1100/spl deg/C, while that of Sb varied from 7/spl times/10/sup 19/ cm/sup -3/ at 800/spl deg/C to 1.2/spl times/10/sup 20/ cm/sup -3/ at 1100/spl deg/C, both of which were higher than previously reported values.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用结合绝缘体上硅(SOI)衬底测定铟和锑在硅中的固溶极限
SOI衬底使我们能够在离子注入中获得高且均匀的杂质浓度分布,并随后进行高温退火。我们用霍尔测量法评价了In和Sb在Si中的固溶极限。结果表明,在800 ~ 1100℃范围内,In的固溶度为1.5/spl倍/10/sup 18/ cm/sup -3/, Sb的固溶度为7/spl倍/10/sup 19/ cm/sup -3/, 800 ~ 1100℃范围内,Sb的固溶度为1.2/spl倍/10/sup 20/ cm/sup -3/,均高于文献报道的固溶度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A new test structure to study electromigration at grain boundaries using the single-crystal aluminum interconnection Test structures for the evaluation of Si substrates Leak current characterization in high frequency operation of CMOS circuits fabricated on SOI substrate Test structure for determining the charge distribution in the oxide of MOS structure Modified transmission line pulse system and transistor test structures for the study of ESD
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1