Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, M. Masahara, H. Ota
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引用次数: 8
Abstract
CMOS tunnel FETs (TFETs) with vertical-tunnel-multiplication (VTM) were fabricated. VTM TFETs initiate band-to-band tunneling (BTBT) parallel to the gate electric field and effectively extend the tunnel area. Impact of the VTM was analyzed using a distributed-element circuit model, and the drain current multiplication by extended tunnel area was experimentally revealed for the first time.
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