A. Remis, D. Díaz-Thomas, L. M. Bartolomé, M. Rio-Calvo, A. Gilbert, G. Boissier, A. Baranov, J. Rodriguez, L. Cerutti, É. Tournié
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引用次数: 0
Abstract
We report on GaSb based interband lasers grown on on-axis silicon substrate working in continuous wave above temperature and emitting between 2 and 5 μm. We will present the dependance of the laser properties with the design of the active regions.
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